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| AO4451 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4451 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4451 is Pb-free (meets ROHS & Sony 259 specifications). AO4451L is a Green Product ordering option. AO4451 and AO4451L are electrically identical. Features VDS (V) = -30V ID = -15 A (V GS = -10V) RDS(ON) < 7.7m (VGS = -10V) RDS(ON) < 12m (VGS = -4.5V) ESD Rating: 4KV HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG Maximum -30 20 -15 -12.8 -80 3.1 2 -55 to 150 Units V V A W C Symbol A A t 10s Steady-State Steady-State RJA RJL Typ 26 50 14 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4451 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.4 -80 6.2 8.1 9.2 50 -0.69 -1 -5 5355 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 970 620 2.8 91 VGS=-10V, VDS=-15V, ID=-15A 46 16 21 15 VGS=-10V, VDS=-15V, RL=1, RGEN=3 IF=-15A, dI/dt=100A/s 15 82.5 34 38 38 50 4.2 120 60 6400 7.7 9.7 12 -1.9 Min -30 -1 -10 10 -2.7 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qg(4.5V) Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4451 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 70 60 50 -ID (A) 40 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 10 Normalized On-Resistance 1.6 ID=-15A 1.4 VGS=-10V VGS=-3V -4V -4.5V -3.5V -ID(A) 40 30 20 125C 10 25C 0 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics -10V 60 50 VDS=-5V 8 RDS(ON) (m) VGS=-4.5V 6 VGS=-10V 4 1.2 VGS=-4.5V 1 2 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 20 16 RDS(ON) (m) 12 8 4 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=-15A 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C VGS=0V 25C 125C Alpha & Omega Semiconductor, Ltd. AO4451 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8000 VDS=-15V ID=-15A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 0 0 20 40 60 80 100 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 10.0 -ID (Amps) 100s 1ms Power (W) 10ms 0.1s 1s TJ(Max)=150C TA=25C 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10s DC 10s 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss 8 -VGS (Volts) 6 4 Coss 2 100 80 60 40 20 0 0.001 TJ(Max)=150C TA=25C 1.0 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 0.1 PD Ton Single Pulse 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 T 0.01 0.00001 Alpha & Omega Semiconductor, Ltd. |
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